Product Summary

The MG50Q1BS11 is a silicon N channel IGBT. The device is suitable for high power switching applications and motor control applications.

Parametrics

MG50Q1BS11 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, DC, IC: 50A; 1ms, ICP: 100A; (4)collector power dissipation, PC: 300W; (5)junction temperature, Tj: 150℃; (6)storage temperature range, Tstg: -40 to 125℃; (7)isolation voltage, VISOL: 2500V.

Features

MG50Q1BS11 features: (1)high input impedance; (2)high speed; (3)low saturation votage; (4)enhancement mode; (5)the electrodes are isolated from case.

Diagrams

MG50Q1BS11 equivalent circuit

MG50Q2YS40
MG50Q2YS40
Other

Data Sheet
Negotiable