Product Summary

The BU508AF is a silicon diffused power transistor. The BU508AF in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.

Parametrics

BU508AF absolute maximum ratings: (1)VCESM Collector-emitter voltage peak value VBE = 0 V: 1500 V; (2)VCE°Collector-emitter voltage (open base): 700 V; (3)IC Collector current (DC): 8 A; (4)ICM Collector current peak value: 15 A; (5)IB Base current (DC): 4 A; (6)IBM Base current peak value: 6 A; (7)Ptot Total power dissipation Ths ≤ 25 °C: 34 W; (8)Tstg Storage temperature: -65 to 150 °C; (9)Tj Junction temperature: 150 °C.

Features

BU508AF features: (1)VCESM Collector-emitter voltage peak value VBE = 0 V: 1500 V; (2)VCEO Collector-emitter voltage (open base): 700 V; (3)IC Collector current (DC): 8 A; (4)ICM Collector current peak value: 15 A; (5)Ptot Total power dissipation Ths £ 25 °C: 34 W; (6)VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A: 1.0 V; (7)ICsat Collector saturation current f = 16 kHz: 4.5 A; (8)tf Fall time ICsat = 4.5 A; f = 16kHz: 0.7 μs.

Diagrams

BU508AF pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BU508AF
BU508AF
STMicroelectronics
Transistors Switching (Resistor Biased) NPN Power Transistor
Data Sheet
0-1: $0.67
1-10: $0.61
10-100: $0.57
100-250: $0.56
BU508AFI
BU508AFI
STMicroelectronics
Transistors Bipolar (BJT) NPN General Purpose
Data Sheet
Negotiable 
BU508AFTBTU
BU508AFTBTU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon
Data Sheet
Negotiable