Product Summary

The CM50TF-12H is a mitsubishi igbt module. The CM50TF-12H is designed for use in switching applications. The CM50TF-12H consists of one IGBT in a single configuration with a reverse-connected super- fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Parametrics

CM50TF-12H absolute maximum ratings: (1)Junction Temperature Tj: -40 to 150 ℃; (2)Storage Temperature Tstg: -40 to 125 ℃; (3)Collector-Emitter Voltage (G-E SHORT)VCES: 600 Volts; (4)Gate-Emitter Voltage (C-E SHORT)VGES: ±20 Volts; (5)Collector Current (Tc = 25℃)IC: 50 Amperes; (6)Peak Collector Current (Tj £ 150℃)ICM: 100 Amperes; (7)Emitter Current** (Tc = 25℃)IE: 50 Amperes; (8)Peak Emitter Current IEM: 100 Amperes; (9)Maximum Collector Dissipation (Tc = 25℃)Pc: 250 Watts; (10)Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)Viso: 2500 Vrms.

Features

CM50TF-12H features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery; (4)Free-Wheel Diode; (5)High Frequency Operation; (6)Isolated Baseplate for Easy Heat Sinking.

Diagrams

CM50TF-12H pin connection

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