(China (Mainland))
Product Summary
The G4PH50KD is an insulated gate bipolar transistor with ultrafast soft recovery diode.
Parametrics
G4PH50KD absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 1200 V; (2)IC @ TC = 25℃ Continuous Collector Current: 45 A; (3)IC @ TC = 100℃ Continuous Collector Current: 24 A; (4)ICM Pulsed Collector Current: 90 A; (5)ILM Clamped Inductive Load Current: 90 A; (6)IF @ TC = 100℃ Diode Continuous Forward Current: 16 A; (7)IFM Diode Maximum Forward Current: 90 A; (8)tsc Short Circuit Withstand Time: 10 μs; (9)VGE Gate-to-Emitter Voltage: ± 20 V; (10)PD @ TC = 25℃ Maximum Power Dissipation: 200 W; (11)PD @ TC = 100℃ Maximum Power Dissipation: 78 W; (12)TJ Operating Junction and TSTG Storage Temperature Range: -55℃ to +150℃.
Features
G4PH50KD features: (1)High short circuit rating optimized for motor control, tsc =10 μs, VCC = 720V, TJ = 125℃, VGE = 15V; (2)Combines low conduction losses with high switching speed; (3)Tighter parameter distribution and higher efficiency than previous generations; (4)IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diode.
Diagrams
