(China (Mainland))
Product Summary
The HY6264P-10 is a high speed, low power 8,192 words by 8-bit CMOS static RAM fabrica­ted using high performance CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns. The HY6264P-10 has a data retention mode that guarantees data to remain valid at a RAM fabrica­ted using power supply voltage of 2.0 volt Using CMOS technology, supply voltages from 2.0 to 5.5 volts have little effect on supply current in data retention mode. Reducing the supply voltage to minimize current drain is unnecessary with the HY6264P-10 family.
Parametrics
HY6264P-10 absolute maximum ratings: (1)VDD, VIN, V|/0 Power Supply, Input, Inpul/Output Voltage: 0.5<2) to 7.0 V; (2)TBIAS Temperature Under Bias: -10 to 125 °c; (3)TSTG Storage Temperature -65 to 150°C; (4)PD Power Dissipation: 1.0 w; (5)IOUT Data Output Current: 50 mA.
Features
HY6264P-10 features: (1)High speed-70/85/100/120/150ns (max.); (2)Low power consumption: 200 mW typical operating; 10 |iW typical standby (L-version); (3)Battery back up (L-version): 2 volt data retention; (4)Fully static operation: No clock or refresh required; (5)All inputs and outputs directly TTL compatible; (6)Tri-state output; (7)High reliability 28-pin 600 mil P-DIP and 330 mil SOP.
Diagrams
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