(China (Mainland))
Product Summary
The IRFK2D450 is an isolated base power HEX-pak assembly-half bridge configuration. The IRFK2D450 utilises the well-proven HEXFET die, combining low on-state resistance with high transconductance. These superior technology die are assembled by state of the art techniques into the TO-240 package, featuring 2.5kV rms isolation and solid M5 screw connections. The small footprint means the package is highly suited to power applications where space is a premium. Available in two versions, IRFK.D for fast switching and IRFK.F for oscillation sensitive applications.
Parametrics
IRFK2D450 absolute maximum ratings: (1)lD @ TC=25℃ Continuous Drain Current: 22A; (2)lD@Tc=100℃ Continuous Drain Current: 14A; (3)lDM Pulse Drain Current: 88A; (4)PD @ TC=25℃ Maximum Power Dissipation: 500W; (5)VGs Gale-to-Source Voltage: 20V; (6)V,NS R.M.S. Isolation Voltage, circuit to base: 2.5kV; (7)Tj Operating Junction Temperature Range: -40 to 150℃; (8)TSTG Storage Temperature Range: -40 to 150℃.
Features
IRFK2D450 features: (1)High Current Capability; (2)UL recognised E78996; (3)Electrically Isolated Base Plate; (4)Easy Assembly into Equipment.
Diagrams
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IRFK3D450 |
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IRFK4HE50 |
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