(China (Mainland))
Product Summary
The IXFN100N50P is a N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode.
Parametrics
IXFN100N50P absolute maximum ratings: (1)VDSS: 500 V when TJ= 25 to 150℃; (2)VDGR: 500 V when TJ= 25 to 150℃; RGS = 1 MΩ; (3)VGSS: ±30 V when Continuous; (4)VGSM: ±40 V when Transient; (5)ID25: 90A when TC = 25℃; (6)IDRMS: 75 A when External lead current limit; (7)IDM: 250 A when TC = 25℃, pulse width limited by TJM; (8)IAR: 100 A when TC = 25℃; (9)EAR: 100 mJ when TC = 25℃; (10)EAS: 5J when TC = 25℃; (11)dv/dt: 20 V/ns when IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150℃, RG = 2Ω; (12)PD: 1040 W when TC = 25℃; (13)TJ: -55 to +150℃; (14)TJM: 150℃; (15)Tstg: -55 to +150℃; (16)T: 300Ω.
Features
IXFN100N50P features: (1)International standard package; (2)Encapsulating epoxy meets UL 94 V-0, flammability classification; (3)miniBLOC with Aluminium nitride isolation; (4)Fast recovery diode; (5)Unclamped Inductive Switching (UIS) rated; (6)Low package inductance: easy to drive and to protect.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 IXFN100N50P |
Ixys |
MOSFET 500V 100A |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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