(China (Mainland))
Product Summary
The IXGH15N120BD1 is a low VCE(sat) IGBT with diode high speed IGBT with diode.
Parametrics
IXGH15N120BD1 absolute maximum ratings: (1)VCES TJ = 25℃ to 150℃: 1200 V; (2)VCGR TJ = 25℃ to 150℃; RGE = 1 MΩ: 1200 V; (3)VGES Continuous: ±20 V; (4)VGEM Transient: ±30 V; (5)IC25 TC = 25℃: 30 A; (6)IC90 TC = 90℃: 15 A; (7)ICM TC = 25℃, 1 ms: 60 A; (8)SSOA VGE= 15 V, TJ = 125℃, RG = 10 (RBSOA)Clamped inductive load @0.8 VCES ICM: 40 A; (9)PC TC = 25℃: 150 W; (10)TJ: -55 : +150℃; (11)TJM: 150℃; (12)Tstg: -55 : +150℃.
Features
IXGH15N120BD1 features: (1)International standard packages: JEDEC TO-247AD & TO-268; (2)IGBT and anti-parallel FRED in one package; (3)MOS Gate turn-on - drive simplicity; (4)Fast Recovery Expitaxial Diode (FRED)- soft recovery with low IRM.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXGH15N120BD1 |
Ixys |
IGBT Transistors 30 Amps 1200V 3.2 Rds |
Data Sheet |
Negotiable |
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Pricing (USD) |
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|
IXGH15N120BD1 |
Ixys |
IGBT Transistors 30 Amps 1200V 3.2 Rds |
Data Sheet |
Negotiable |
|
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