Product Summary

The IXSH24N60 is a hiperfast IGBT.

Parametrics

IXSH24N60 absolute maximum ratings: (1)VCES TJ = 25℃ to 150℃: 600 V; (2)VCGR TJ = 25℃ to 150℃; RGE = 1 MΩ: 600 V; (3)VGES Continuous: ±20 V; (4)VGEM Transient: ±30 V; (5)IC25 TC = 25℃: 48 A; (6)IC90 TC = 90℃: 24 A; (7)ICM TC = 25℃, 1 ms: 96 A; (8)SSOA VGE= 15 V, TJ = 125℃, RG = 10 (RBSOA)Clamped inductive load @0.8 VCES ICM: 48 A; (9)PC TC = 25℃: 150 W; (10)TJ: -55 to +150℃; (11)TJM: 150℃; (12)Tstg: -55 to +150℃.

Features

IXSH24N60 features: (1)International standard package JEDEC TO-247 AD; (2)High frequency IGBT with guaranteed Short Circuit SOA capability; (3)2nd generation HDMOSTM process; (4)Low VCE(sat)- for low on-state conduction losses; (5)MOS Gate turn-on - drive simplicity.

Diagrams

IXSH24N60 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXSH24N60
IXSH24N60

Ixys

IGBT Transistors 48 Amps 600V 2.2 Rds

Data Sheet

Negotiable 
IXSH24N60A
IXSH24N60A

Ixys

IGBT Transistors S-SERIES LO VCE SNGL 600V 24A

Data Sheet

Negotiable 
IXSH24N60U1
IXSH24N60U1

Ixys

IGBT Transistors S-SERIE MED SPD IGBT FREEWHEELING 600V48A

Data Sheet

Negotiable 
IXSH24N60AU1
IXSH24N60AU1

Ixys

IGBT Transistors 48 Amps 600V 2.7 Rds

Data Sheet

Negotiable 
IXSH24N60BD1
IXSH24N60BD1

Ixys

IGBT Transistors 48 Amps 600V 2.5 Rds

Data Sheet

Negotiable 
IXSH24N60B
IXSH24N60B

Ixys

IGBT Transistors 48 Amps 600V 2.5 Rds

Data Sheet

Negotiable