Product Summary

The K1167 is an n-channel mos silicon FET. The K1413 has high-voltage high-speed switching applications.

Parametrics

K1167 absolute maximum ratings: (1)Drain to source voltage VDSS: 450 V; (2)Gate to source voltage VGSS: ±30 V; (3)Drain current ID: 15 A; (4)Drain peak current ID(pulse): 60 A; (5)Body to drain diode reverse drain current IDR: 15 A; (6)Channel dissipation Pch: 100 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.

Features

K1167 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)No secondary breakdown; (5)Suitable for switching regulator and DC-DC converter.

Diagrams

K1167 pin connection