Product Summary

The K1413 is an n-channel mos silicon FET. The K1413 has high-voltage high-speed switching applications.

Parametrics

K1413 absolute maximum ratings: (1)Drain to Source Voltage VDSS: 1500V; (2)Gate to Source Voltage Vgss: ±20V; (3)Drain Current(DC)Id: 2A; (4)Drain Current(Pulse)Idp PW=≦10μs, duty cycled 1%: 4A; (5)Allowable Power Dissipation Pd: 3.0W; Tc = 25℃: 60W; (6)Channel Temperature Tch: 150℃; (7)Storage Temperature Tstg: -55 to +150℃.

Features

K1413 features: (1)Low ON resistance, low input capacitance, very high-speed switching; (2)High reliability (Adoption of HYP process).

Diagrams

K1413 pin connection