(China (Mainland))
Product Summary
The K1518 is an n-channel mos silicon FET. The K1518 has high-voltage high-speed switching applications.
Parametrics
K1518 absolute maximum ratings: (1)Drain to source voltage VDSS: 500 V; (2)Gate to source voltage VGSS: ±30 V; (3)Drain current ID: 20 A; (4)Drain peak current ID(pulse): 80 A; (5)Body to drain diode reverse drain current IDR: 20 A; (6)Channel dissipation Pch: 120 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
K1518 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)Built-in fast recovery diode (trr = 120 ns); (5)Suitable for motor control, switching regulator, DC-DC converter.
Diagrams
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 K151J10C0GF53H5 |
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CAP CER 150PF 50V 5% RADIAL |
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K151J10C0GF53L2 |
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CAP CER 150PF 50V 5% RADIAL |
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K151J10C0GF5TH5 |
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CAP CER 150PF 50V 5% RADIAL |
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K151K10X7RH5UL2 |
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CAP CER 150PF 100V X7R RADIAL |
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K151K15C0GF53H5 |
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CAP CER 150PF 50V 10% RADIAL |
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K151K15C0GF53L2 |
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CAP CER 150PF 50V 10% RADIAL |
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