Product Summary

The K2996 is a silicon n channel mos type field effect transistor. The K2996 has high speed, high voltage switching applications, chopper regulator, dc-dc converter and motor drive applications.


Parametrics

K2996 absolute maximum ratings: (1)Drain-Source Voltage VDSS: 600V; (2)Drain-Gate Voltage (RGS = 20 kO)VDGR: 600V; (3)Gate-Source Voltage VGSS: ±30V; (4)Drain Current DC id: 10A; (5)Drain Current Pulse JDP: 30A; (6)Drain Power Dissipation (Tc = 25℃)Pd: 45W; (7)Single Pulse Avalanche Energy eAS: 252mJ; (8)Avalanche Current iar10A; (9)Repetitive Avalanche Energy ear: 4.5mJ; (10)Channel Temperature Tch: 150℃; (11)Storage Temperature Range Tstg: -55-150℃.


Features

K2996 features: (1)Low Drain-Source ON Resistance: RdS (ON)= 0.74 fi (Typ.)High Forward Transfer Admittance: |Yfs| = 6.8 S (Typ.); (2)Low Leakage Current: IdSS = 10® (Max.)(V^S = 600 V); (3)Enhancement-Mode: V^h = 2.0~4.0V (VDS = 10 V, ID = 1mA).


Diagrams

K2996 pin connection