(China (Mainland))
Product Summary
The M5M51008DFP-55H is a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. The M5M51008DFP-55H is low standby current and low operation current and ideal for the battery back-up application.
Parametrics
M5M51008DFP-55H absolute maximum ratings: (1)Kcc Supply voltage With respect to GND: - 0.3 -7V; (2)Vi Input voltage: - 0.3 -Vcc + 0.3V; (3)V0 Output voltage: 0-VccV; (4)Pd Power dissipation Ta=25℃: 700mW; (5)Topr Operating temperature: 0-70℃; (6)Tstg Storage temperature: - 65-150℃.
Features
M5M51008DFP-55H features: (1)Directly TTL compatible : All inputs and outputs; (2)Easy memory expansion and power down by S1,S2; (3)Data hold on +2V power supply; (4)Three-state outputs : OR - tie capability; (5)OE prevents data contention in the I/O bus; (6)Common data I/O.
Diagrams
 |
 M5M51008BFP |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M5M51008BFP-70VL |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M5M51008BKV-70VL |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M5M51008BP-55L |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M5M51008BRV-70VL |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M5M51008BVP-70VL |
Other |
|
Data Sheet |
Negotiable |
|
||||
