(China (Mainland))
Product Summary
The MBM2764-25 is a high speed 65,536-bit static N-channel MOS erasable and electrically reprogrammable read only memory(EPROM). It is especially well suited for applications where rapid turn-around and/or bit pattern experimentation are important. The MBM2764-25 is fabricated using N-MOS double polysilicon gate technology with single transistor stacked gate cells. The MBM2764-25 is organized as 8192 words by 8 bits for use in microprocessor appliacations. Single +5V operation greatly facilitates its use in systems.
Parametrics
MBM2764-25 absolute maximum ratings: (1)Temperature under bias TBIAS: -25 to +85 ℃; (2)Storage temperature TSTG: -65 to +125 ℃; (3)All inputs/outputs voltage with respect to GND VIN, VOUT: -0.6 to +7 V; (4)VPP voltage with respect to GND VPP: -0.6 to +22 V; (5)Supply voltage with respect to GND VCC: -0.6 to +7 V.
Features
MBM2764-25 features: (1)8192 words × 8 bits organization, fully decoded; (2)Simple programming requirements; (3)Single location programming; (4)Programmable utilizing the quick Pro Algorithm; (5)Programs with one 50ms or 1ms pulse; (6)Low power requirement Active: 788mW(550mW), standby: 184mW(193mW); (7)No clocks required; (8)TTL compatible inputs/outputs.
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