Product Summary

The N60RUFD is an insulated gate bipolar transistor (IGBT) provides low conduction and switching losses.The N60RUFD is designed for Motor applications where ruggedness is a required feature. Applications of the N60RUFD are motor controls and general purpose inverters.

Parametrics

N60RUFD absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 600 V; (2)VGES Gate-Emitter Voltage: ± 20 V; (3)IC Collector Current @ TC = 25℃: 14 A Collector Current @ TC = 100℃: 7 A; (4)ICM (1)Pulsed Collector Current: 21 A; (5)IF Diode Continuous Forward Current @ TC = 100℃: 12 A; (6)IFM Diode Maximum Forward Current: 60 A; (7)PD Maximum Power Dissipation @ TC = 25℃: 69 W Maximum Power Dissipation @ TC = 100℃: 28 W; (8)TJ Operating Junction Temperature: -55 to +150 ℃; (9)Tstg Storage Temperature Range: -55 to +150 ℃; (10)TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds:300 ℃.

Features

N60RUFD features: (1)High speed switching; (2)Low saturation voltage: VCE(sat)= 1.95 V @ IC = 7A; (3)High input impedance; (4)CO-PAK, IGBT with FRD: trr = 50 ns (typ.); (5)Short Circuit rated.

Diagrams

N60RUFD pin connection