(China (Mainland))
Product Summary
The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154-to 162-MHz range. The RA35H1516M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
Parametrics
RA35H1516M absolute maximum ratings: (1)Drain Voltage: 17V; (2)Gate Voltage: 6V; (3)Input Power: 100mW; (4)Output Power: 50W; (5)Operation Case Temperature Range: -30 to +110℃; (6)Storage Temperature Range: -40 to +100℃.
Features
RA35H1516M features: (1)Enhancement-Mode MOSFET Transistors (IDD≈0 @ VDD=12.5V, VGG=0V) ; (2)Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW ; (3)Low-Power Control Current IGG=1mA (typ) at VGG=5V ; (4)Module Size: 66 x 21 x 9.88 mm ; (5)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
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