(China (Mainland))
Product Summary
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operates in the 136- to 174-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The RA60H1317M1A output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
Parametrics
RA60H1317M1A absolute maximum ratings: (1)VDD, Drain Voltage: 17V; (2)VGG, Gate Voltage: 5.5V; (3)Pin Input Power: 100mW; (4)Pout, Output Power: 80W; (5)Tcase(OP), Operation Case Temperature Range: -30 to 100℃; (6)Tstg, Storage Temperature Range: -40 to 110℃.
Features
RA60H1317M1A features: (1)Enhancement-Mode MOSFET Transistors (IDD=0 @ VDD=12.5V, VGG=0V); (2)Pout>60W, ηT>45% @ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 136-174MHz; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V; (5)Module Size: 67 × 18 × 9.9 mm; (6)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
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 RA60H1317M1A |
Other |
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Data Sheet |
Negotiable |
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