STW12NK90Z

900V, 0.72Ω, 11A, TO-247, SuperMESH Power MOSFET, 230W

Rated 5 Rating 5 | reviews | Write a review

Price:: US $2.00~5.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $2.00~5.00

PartNumber:: STW12NK90Z

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Pamela's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-03-21

From Other Seller

Part Number:STW12NK90Z
US $2.00 - 5.00
AT25256AW-10SU-2.7

US $0.65 - 1.50 / Piece
(0) Remove
IRF3205

US $0.80 - 2.50 / Piece
(0) Remove
Quantity:

piece

Product Summary

The STW12NK90Z is an N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH Power MOSFET. The STW12NK90Z is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The STW12NK90Z is suitable for Switching application.

Parametrics

STW12NK90Z absolute maximum ratings: (1)VDS, Drain-source voltage (VGS = 0): 900 V; (2)VGS, Gate- source voltage: ± 30 V; (3)ID, Drain current (continuous) at TC = 25℃: 11 A; (4)ID, Drain current (continuous) at TC = 100℃: 7 A; (5)IDM, Drain current (pulsed): 44 A; (6)Ptot, Total dissipation at TC = 25℃: 230 W; (7)Derating Factor: 1.85 W/℃; (8)VESD(G-S), Gate source ESD(HBM-C=100pF, R=1.5KΩ): 6000 V; (9)EAS, Single pulse avalanche energy: 4.5 mJ; (10)Tstg, Storage temperature: -55 to 150℃; (11)Tj, Max. operating junction temperature: -55 to 150℃.

Features

STW12NK90Z features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatibility.