(China (Mainland))
Product Summary
The BUZ311 is a SIPMOS power transistor.
Parametrics
BUZ311 absolute maximum ratings: (1)Drain source voltage VDS: 1000 V; (2)Drain-gate voltage RGS = 20 kW VDGR: 1000V; (3)Continuous drain current TC = 25 ℃ ID: 2.5 A; (4)Pulsed drain current TC = 25 ℃ IDpuls: 10A; (5)Gate source voltage VGS: ± 20 V; (6)Power dissipation TC = 25 ℃ Ptot: 78 W; (7)Operating temperature T j: -55 ... ...+ 150 ℃; (8)Storage temperature Tstg: -55 ... ...+ 150℃.
Features
BUZ311 features: (1)N channel; (2)Enhancement mode.
Diagrams
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 BUZ311 |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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BUZ308 |
Other |
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Data Sheet |
Negotiable |
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BUZ310 |
Other |
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Data Sheet |
Negotiable |
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BUZ311 |
Other |
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Data Sheet |
Negotiable |
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BUZ312 |
Other |
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Data Sheet |
Negotiable |
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BUZ31 H |
Infineon Technologies |
MOSFET N-Channel 200V Transistor |
Data Sheet |
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BUZ31 E3046 |
Infineon Technologies |
MOSFET N-KANAL POWER MOS |
Data Sheet |
Negotiable |
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