Product Summary

The TIP137 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP137. Also TIP137 is a PNP type.

Parametrics

TIP137 absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 100 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 100 V; (3)VEBO Emitter-Base Voltage (IC = 0): 5 V; (4)IC Collector Current: 8 A; (5)ICM Collector Peak Current: 12 A; (6)IB Base Current: 0.3 A; (7)Ptot Total Dissipation: 70W; (8)Ts tg Storage Temperature: -65 to 150 ℃; (9)Tj Max. Operating Junction Temperature: 150 ℃.

Features

TIP137 features: (1)Designed for Complementary Use with TIP130, TIP131 and TIP132; (2)70 W at 25℃ Case Temperature; (3)8 A Continuous Collector Current; (4)Minimum hFE of 1000 at 4 V, 4 A.

Diagrams

TIP137 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TIP137-S
TIP137-S

Bourns

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Data Sheet

Negotiable 
TIP137G
TIP137G

ON Semiconductor

Transistors Darlington 4A 100V Bipolar Power PNP

Data Sheet

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TIP137
TIP137

STMicroelectronics

Transistors Darlington PNP Power Darlington

Data Sheet

0-1: $0.57
1-10: $0.49
10-100: $0.40
100-250: $0.37