Product Summary

The TIP3055 is a complementary silicon power transistor designed for general-purpose switching and amplifier applications.

Parametrics

TIP3055 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 60 Vdc; (2)Collector–Emitter Voltage, VCER: 70 Vdc; (3)Collector–Base Voltage, VCB: 100 Vdc; (4)Emitter–Base Voltage, VEB: 7.0 Vdc; (5)Collector Current — Continuous, IC: 1 5 Adc; (6)Base Current, IB: 7.0 Adc; (7)Total Power Dissipation, PD: 90Watts; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: –65 to +150℃.

Features

TIP3055 features: (1)DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc; (2)Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc; (3)Excellent Safe Operating Area.

Diagrams

TIP3055 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TIP3055
TIP3055
STMicroelectronics
Transistors Bipolar (BJT) NPN Power Darlington
Data Sheet
0-1: $0.61
1-10: $0.57
10-100: $0.52
100-250: $0.49
TIP3055G
TIP3055G
ON Semiconductor
Transistors Bipolar (BJT) 15A 60V 80W NPN
Data Sheet
0-1: $1.01
1-25: $0.82
25-100: $0.73
100-500: $0.64
TIP3055-S
TIP3055-S
Bourns
Transistors Bipolar (BJT) 60V 15A NPN
Data Sheet
Negotiable